Download PDFOpen PDF in browserBehavior of Epitaxial GaN Layers on the Polyimides Polymer SubstratesEasyChair Preprint 49665 pages•Date: February 3, 2021AbstractThe present work describes the succesfully growth of epitaxial gallium nitride (GaN) layers on the polyimide polymer substrates in an Ion Beam Assisted Deposition process (IBAD), using nitrogen ions with hyperthermal energies. By applying Scanning Electron Microscopy (SEM) and Quantum Design Physical Properties Measurement System, the behaviour of hexagonal GaN thin films is investigated. The high quality of GaN layers on polymer polyimide substrates is useful to many applications esxpecially for optoelectronic devices and semiconductors devices Keyphrases: GAN, Ion Beam Assisted Deposition, Polyimides
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