Schottky Junction Formation and Its Impact on Photodetector Efficiency

EasyChair Preprint 14484

Abstract

Schottky junctions, formed at the interface between a metal and a semiconductor, are pivotal in various electronic and optoelectronic devices, including photodetectors. The formation of a Schottky junction involves the deposition of a metal onto a semiconductor substrate, creating an energy barrier that influences charge carrier dynamics. This barrier, known as the Schottky barrier, plays a critical role in determining the efficiency of photodetectors by affecting key performance parameters such as responsivity, dark current, and response speed.

In photodetectors, the Schottky junction impacts efficiency through its influence on photocurrent generation and sensitivity to incident light. A well-optimized Schottky barrier can enhance photocurrent while minimizing dark current, leading to improved signal-to-noise ratios and higher sensitivity. Additionally, the design of the Schottky junction affects the speed and bandwidth of photodetectors, influencing their suitability for high-speed and high-frequency applications.

The efficiency of Schottky junction-based photodetectors is also influenced by material choices, including the selection of metals and semiconductors, as well as interface quality and doping levels. Advances in materials science and nanotechnology continue to enhance the performance of Schottky junctions, making them increasingly relevant for advanced optoelectronic applications.

Keyphrases: Barrier height, Doping Levels, Schottky diode, Schottky junction, electron affinity

@booklet{EasyChair:14484,
  author    = {Godwin Olaoye and Docas Akinyele},
  title     = {Schottky Junction Formation and Its Impact on Photodetector Efficiency},
  howpublished = {EasyChair Preprint 14484},
  year      = {EasyChair, 2024}}